| Place of Origin: | Jiangxi, China |
|---|---|
| Brand Name: | DEC |
| Certification: | RoHS |
| Model Number: | MBRF30100DT |
| Minimum Order Quantity: | 1000PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
| Supply Ability: | 15,000,000PCS Per Day |
| Type: | 100v Schottky Diode | Package Type: | Surface Mount |
|---|---|---|---|
| Repetitive Peak Reverse Voltage: | 100V | Working Peak Reverse Voltage: | 100V |
| Maximum DC Blocking Voltage: | 100V | Peak Forward Surge Current: | 28A |
| Voltage Rate Of Change: | 10000 V/μs | Typical Thermal Resistance,Junction To Case: | 1.5 ℃/W |
| High Light: | schottky barrier rectifier,power schottky diode |
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Low Reverse Current 100v Schottky Diode / Schottky Diode Forward Voltage Drop
100v Schottky Diode Advantage
100v Schottky Diode has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the maximum is only about 100V, which limits its application range. For example, in the switching power supply (SMPS) and power factor correction (PFC) circuits, the freewheeling diode of the power switching device, the transformer secondary uses a high-frequency rectifier diode of 100V or more, and the RCD snubber circuit uses a high-speed diode of 600V to 1.2kV. The PFC boost uses a 600V diode, etc., and only uses a fast recovery epitaxial diode (FRED) and an ultra fast recovery diode (UFRD). The reverse recovery time Trr of UFRD is also above 20 ns, which cannot meet the needs of SMPS of 1 MHz to 3 MHz in fields such as space stations. Even with a SMPS with a hard switch of 100 kHz, due to the large conduction loss and switching loss of the UFRD, the case temperature is high, and a large heat sink is required, so that the volume and weight of the SMPS are increased, which is not compatible with miniaturization and thinning. The development trend. Therefore, the development of high-pressure SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made breakthroughs. High-voltage SBDs of 150V and 200V have been launched. SBDs with more than 1kV made of new materials have also been successfully developed, thus injecting new vitality and vitality into their applications.
100v Schottky Diode Features
High switching frequency
Low forward voltage drop
High efficiency and low power loss
High volume of current and good capability of surge current
100v Schottky Diode Applications
The Schottky barrier diodes are used for signal-routing tasks, Metallurgically Bonded Construction , rail-to-rail protection and RF applications, such as balanced mixers and demodulators. Devices above 100 mA enter the converter application field with rectification tasks, or discrete OR-ing function.
| Type: | 100v Schottky Diode | Package Type: | Surface Mount |
|---|---|---|---|
| Repetitive Peak Reverse Voltage: | 100V | Working Peak Reverse Voltage: | 100V |
| Maximum DC Blocking Voltage: | 100V | Peak Forward Surge Current: | 28A |
| Voltage Rate Of Change: | 10000 V/μs | Typical Thermal Resistance,Junction To Case: | 1 |
Absolute Maximum Ratings (Tc=25°C)
| Symbol | Parameters | Ratings | Unit |
| VRRM |
Repetitive Peak Reverse Voltage |
100 | V |
| VRWM |
Working peak reverse voltage |
100 | V |
| VR |
Maximum DC blocking voltage |
100 | V |
| IF(AV) |
Maximum average forward rectified current Total device |
28 | A |
| IFSM |
Peak Forward Surge Current |
280 | A |
| Tj |
Operating junction temperature range |
-65~150 | ℃ |
| Tstg |
Storage temperature range |
-65~175 | ℃ |
Electrical characteristics
| Symbol | Parameters | Min | Typical | Max | Units | Conditions |
| IR |
Maximum Reverse Leakage Current (Note 1) |
-- | -- |
50 100 |
uA |
VR=VRRM TC = 25 °C TC = 125 °C |
|
VF
|
Maximum Instantaneous Forward Voltage(Note 2) |
-- | 0.56 | 0.58 |
V
|
IF= 28 A,TC = 25 °C |
| Rth(j-c) |
Typical Thermal Resistance,Junction to Case |
-- | -- | 1.5 | ℃/W | |
| dV/dt |
Voltage Rate of Change |
-- | -- | 10000 | V/μs |
|
Note 1: 2.0uS Pulse Width, f=1.0KHz
Note 2: Pulse Test : 300us Pulse Width, 1% Duty Cycle
Ratings and Characteristic curves