1n4007 Low Voltage Schottky Diode , Epithelial Construction Schottky Zener Diode

1n4007 Low Voltage Schottky Diode , Epithelial Construction Schottky Zener Diode

Low Voltage Schottky Diode Package

Schottky Signal Diode are available in both leaded and surface mount (sMD) packages. Schottky diodes in leaded packages are commonly used as high frequency, high current rectifier diodes, freewheeling diodes or protection diodes. It is available in single-tube and pair-tube (dual-diode) packages. Schottky has three types of pinouts for the tube, which has a common cathode (the cathode of the two tubes is connected), a common anode (the anode of the two tubes is connected), and a series (the anode of one diode is connected to the cathode of the other diode).

Schottky diodes with surface mount are available in single-tube, double-tube and triple-tube versions, with A~19 pinouts.

Low Voltage Schottky Diode Application

The Schottky barrier diodes are used for signal-routing tasks, Metallurgically Bonded Construction , rail-to-rail protection and RF applications, such as balanced mixers and demodulators. Devices above 100 mA enter the converter application field with rectification tasks, or discrete OR-ing function.

Low Voltage Schottky Diode Advantage

SBD has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the maximum is only about 100V, which limits its application range. For example, in the switching power supply (SMPS) and power factor correction (PFC) circuits, the freewheeling diode of the power switching device, the transformer secondary uses a high-frequency rectifier diode of 100V or more, and the RCD snubber circuit uses a high-speed diode of 600V to 1.2kV. The PFC boost uses a 600V diode, etc., and only uses a fast recovery epitaxial diode (FRED) and an ultra fast recovery diode (UFRD). The reverse recovery time Trr of UFRD is also above 20 ns, which cannot meet the needs of SMPS of 1 MHz to 3 MHz in fields such as space stations. Even with a SMPS with a hard switch of 100 kHz, due to the large conduction loss and switching loss of the UFRD, the case temperature is high, and a large heat sink is required, so that the volume and weight of the SMPS are increased, which is not compatible with miniaturization and thinning. The development trend. Therefore, the development of high-pressure SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made breakthroughs. High-voltage SBDs of 150V and 200V have been launched. SBDs with more than 1kV made of new materials have also been successfully developed, thus injecting new vitality and vitality into their applications.