Place of Origin: | Guangdong, China |
---|---|
Brand Name: | CANYI |
Certification: | RoHS |
Model Number: | AO3400 |
Minimum Order Quantity: | 1000PCS |
Price: | Negotiated |
Packaging Details: | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
Delivery Time: | 3-5 days |
Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
Supply Ability: | 15,000,000PCS Per Day |
Type: | N Channel MOSFET Transistor | Package Type: | Surface Mount |
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Package: | SOT-23 | VDS: | 30V |
Tstg: | -55~ +150℃ | Sample: | Free |
Port: | Shenzhen | ||
High Light: | mosfet power transistor,high power transistor |
AO3400 SOT-23 mosfet power transistor NPN MOSFET A09T n channel transistor
Features:
Parameter | Symbol | Limit | Unit |
Drain-Source Voltage | VDS | 30 | V |
Gate-Source Voltage | VGS | ±12 | |
Continuous Drain Current | ID | 5.8 | A |
|
IDM | 30 | |
Power Dissipation | PD | 350 | mW |
Junction Temperature | TJ | 150 | ℃ |
Storage Temperature | TSTG | -55~+150 | ℃ |
Electrical Characteristics (TA=25°C, unless otherwise noted)
Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
Off Characteristics | ||||||
Drain-Source Breakdown Voltage | V(BR) DSS | VGS = 0V, ID = -250uA | 30 | V | ||
Zero Gate Voltage Drain Current | IDSS | VDS = 24V, VGS = -0V | 1 | uA | ||
Gate Body Leakage | IGSS | VGS=±12v,VDS= 0V | ±100 | nA | ||
On characteristics | ||||||
Drain-Source On-State Resistance(NOTE 3) | RDS(on) | VGS = 10V, ID = 5.8A | 35 | mΩ | ||
VGS = 4.5V, ID = 5A | 40 | |||||
VGS = 2.5V, ID =4A | 52 | |||||
Forward Transconductance 1) | gfs | VDS= 5V,ID= 5A | 8 | S | ||
Gate Threshold Voltage | VGS(th) | VDS = VGS ,ID = 250uA | 0.7 | 1.4 | v | |
Switching Characteristics (note 4,5) | ||||||
Turn-On Delay Time | td(on) |
VDD = 10V, VDS=15V |
5 | ns | ||
Turn-On Rise Time | tr | 7 | ||||
Turn-Off Delay Time | td(off) | 40 | ||||
Turn-Off Fall Time | tf | 6 | ||||
Dynamic Characteristics (note 4,5) | ||||||
Input Capacitance | Ciss |
|
1095 | pF | ||
Output Capacitance | Coss | 99 | ||||
Reverse Transfer Capacitance | Crss | 77 | ||||
Drain-source diode characteristics and maximum ratings | ||||||
Diode Forward Voltage(NOTE 3) | VSD | 1 |
V |
Note :
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t < 5 sec.
3. Pulse Test : Pulse Width≤300µs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production testing.
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3. QC Service: Great Quality Check, We know how to do good check quality. We have 19 years experience professional QC team.
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5. Long-Term Service: We are looking for long-term business PARTNER! So we supply excellent service and can design as your request.