Place of Origin: | Guangdong, China |
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Brand Name: | CANYI |
Certification: | RoHS |
Model Number: | BC856W BC857W BC858W |
Minimum Order Quantity: | 1000PCS |
Price: | Negotiated |
Packaging Details: | Dimensions per Unit:19*6.3*21 centimeter • Weight per Unit:100g• Units per Export Carton:10000 • Export Carton Dimensions L/W/H: 42*33*24 centimeter• Export Carton Weight:3 Kilograms |
Delivery Time: | 3-5 days |
Payment Terms: | Telegraphic Transfer in Advance (Advance TT, T/T) |
Supply Ability: | 15,000,000PCS Per Day |
Type: | Plastic Transistor | Package: | SOT-323 |
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TJ, Tstg: | -65 To 150℃ | Shipping By: | DHL\UPS\Fedex\EMS\HK Post |
Lead Time: | 2-3days | Application: | For VCD, DVD, Calculator, Etc. |
Highlight: | mosfet power transistor,high power transistor |
p mosfet horizontal output transistor SOT323 3D 3H 3M field effect transistor
TYPE NUMBERMARKING CODE:
BC856W: 3D*
BC856AW: 3A*
BC856BW: 3B*
BC857W: 3H*
BC857AW: 3E*
BC857BW: 3F*
BC857CW: 3G*
BC858W: 3M*
Field effect transistor features:
Horizontal output transistor applications:
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
PARAMETER | SYMBOL | CONDITIONS | MIN. | MAX. | UNIT |
collector-base voltage | VCBO | open emitter | |||
BC856W | − | −80 | V | ||
BC857W | − | −50 | V | ||
BC858W | − | −30 | V | ||
collector-emitter voltage | VCEO | open base | |||
BC856W | − | −65 | V | ||
BC857W | − | −45 | V | ||
BC858W | − | −30 | V | ||
emitter-base voltage | VEBO | open collector | − | −5 | V |
collector current (DC) | IC | − | −100 | mA | |
peak collector current | ICM | − | −200 | mA | |
peak base current | IBM | − | −200 | mA | |
total power dissipation | Ptot | Tamb ≤ 25 °C; note 1 | − | 200 | mW |
storage temperature | Tstg | −65 | +150 | °C | |
junction temperature | Tj | − | 150 | °C | |
operating ambient temperature | Tamb | −65 | +150 | °C |
Note
CHARACTERISTICS Tamb = 25 °C; unless otherwise specified.
PARAMETER | SYMBOL | CONDITIONS | MIN. | TYP. | MAX. | UNIT |
collector-base cut-off current | ICBO | VCB = −30 V; IE = 0 | − | −1 | −15 | nA |
VCB = −30 V; IE = 0; Tj = 150 °C |
− | − | −4 | μA | ||
emitter-base cut-off current | IEBO | VEB = −5 V; IC = 0 | − | − | −100 | nA |
DC current gain | hFE | IC = −2 mA; VCE = −5 V | ||||
BC856W | 125 | − | 475 | |||
BC857W; BC858W | 125 | − | 800 | |||
BC856AW; BC857AW | 125 | − | 250 | |||
BC856BW; BC857BW | 220 | − | 475 | |||
BC857CW | 420 | − | 800 | |||
collector-emitter saturation voltage | VCEsat | IC = −10 mA; IB = −0.5 mA | − | −75 | −300 | mV |
IC = −100 mA; IB = −5 mA;note 1 | − | −250 | −600 | mV | ||
base-emitter saturation voltage | VBEsat | IC = −10 mA; IB = −0.5 mA | − | −700 | − | mV |
IC = −100 mA; IB = −5 mA;note 1 | − | −850 | − | mV | ||
base-emitter voltage | VBE | IC = −2 mA; VCE = −5 V | −600 | −650 | −750 | mV |
IC = −10 mA; VCE = −5 V | − | − | −820 | mV | ||
collector capacitance | Cc | VCB = −10 V; IE = Ie = 0;f = 1 MHz | − | − | 3 | pF |
emitter capacitance | Ce | VEB = −0.5 V; IC = Ic = 0;f = 1 MHz | − | − | 12 | pF |
transition frequency | fT | VCE = −5 V; IC = −10 mA;f = 100 MHz | 100 | − | − | MHz |
noise figure | F | IC = −200 μA; VCE = −5 V;RS = 2 kΩ; f = 1 kHz;B = 200 Hz | − | − | 10 |
dB
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Note:
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Shenzhen Canyi Electronics Technology Co., Ltd. was established in 2000. After more than ten years of development, it has become a professional agent of well-known electronic component brands at home and abroad.
Contact:Wendy Yan
Email:wendy@doublelight.com.cn
Wechat:+86 13423609933
Skype:wendy@doublelight.com.cn
Whatsapp:+86 13423609933